Systems & Applications

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Christian Carlowitz
Friedrich-Alexander-Univ. Erlangen-Nürnberg
Hermann Boss
Rohde & Schwarz GmbH & Co KG
Location
403B
Abstract

This session addresses advanced mixed-signal transmitter and optical driver ICs towards 100 Gbit/s. It starts with a 100-Gbit/s 3-bit DAC for PAM signal generation, followed by two 50-Gbit/s class optical drivers for MZ modulator and VCSEL. Finally, a CMOS wideband FMCW radar transmitter is presented as well as a Ka-band phase shifter for 5G applications.

Technical Papers
Abstract
Tu3C-1: A 3-Bit DAC with Gray Coding for 100-Gbit/s PAM Signal Generation
Vincent Rieß, Paul Stärke, Mohammad Mahdi Khafaji, Corrado Carta, Frank Ellinger
Vincent Rieß, Technische Universität Dresden
(13:40 - 14:00)
Abstract
Tu3C-2: A 50-Gb/s Optical Transmitter Based on Co-Design of a 45-nm CMOS SOI Distributed Driver and 90-nm Silicon Photonic Mach-Zehnder Modulator
Navid Hosseinzadeh, Kelvin Fang, Luis A. Valenzuela, Clint L. Schow, James F. Buckwalter
Navid Hosseinzadeh, Univ. of California, Santa Barbara
(14:00 - 14:20)
Abstract
Tu3C-3: A 2.85pJ/Bit, 52-Gbps NRZ VCSEL Driver with Two-Tap Feedforward Equalization
Luis A. Valenzuela, Hector Andrade, Navid Hosseinzadeh, Aaron Maharry, Clint L. Schow, James F. Buckwalter
Luis A. Valenzuela, Univ. of California, Santa Barbara
(14:20 - 14:40)
Abstract
Tu3C-4: A 6.5~7.5-GHz CMOS Wideband FMCW Radar Transmitter Based on Synthetic Bandwidth Technique
Hanyang Su, Siegfred D. Balon, Ke You Cheong, Chun-Huat Heng
Hanyang Su, NUS
(14:40 - 15:00)
Abstract
Tu3C-5: A 24–30GHz Ultra-Compact Phase Shifter Using All-Pass Networks for 5G User Equipment
Eduardo V.P. Anjos, Dominique M. M.-P. Schreurs, Guy A.E. Vandenbosch, Marcel Geurts
Eduardo V.P. Anjos, Katholieke Univ. Leuven
(15:00 - 15:20)
Charles Campbell
QORVO, Inc.
Gayle Collins
Obsidian Microwave, LLC.
Location
408A
Abstract

New design techniques for broad/dual-band GaN and GaAs high-performance power amplifiers are presented in this session. This body of work covers DC–20 GHz with efficiencies up to and greater than 60%. Power outputs of less than one watt to over 60 Watts are demonstrated. The methodologies include non-uniform distributed amplifier design for broadband performance, dual band approaches including leveraging the bias circuit for improved performance and broadband techniques for the driver amplifier. Both MMIC and hybrid approaches are covered.

Technical Papers
Abstract
Tu3F-1: A Compact 10W 2–20GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Output Impedance Transformer
Michael Roberg, Manyam Pilla, Scott Schafer, Thi Ri Mya Kywe, Robert Flynt, Nguyenvu Chu
Michael Roberg, Qorvo
(13:40 - 14:00)
Abstract
Tu3F-2: 2.5 to 10.0GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA
Jun Kamioka, Masatake Hangai, Shinichi Miwa, Yoshitaka Kamo, Shintaro Shinjo
Jun Kamioka, Mitsubishi Electric
(14:00 - 14:20)
Abstract
Tu3F-3: Two-Stage Concurrent X/Ku Dual-Band GaAs MMIC Power Amplifier
Philip Zurek, Zoya Popović
Philip Zurek, University of Colorado Boulder
(14:20 - 14:40)
Abstract
Tu3F-4: Broadband Driver Amplifier with Voltage Offset for GaN-Based Switching PAs
T. Hoffmann, Florian Hühn, S. Shevchenko, Wolfgang Heinrich
Andreas Wentzel, FBH
(14:40 - 15:00)
Abstract
Tu3F-5: A Dual-Mode Bias Circuit Enabled GaN Doherty Amplifier Operating in 0.85–2.05GHz and 2.4–4.2GHz
Yuji Komatsuzaki, Rui Ma, Shuichi Sakata, Keigo Nakatani, Shintaro Shinjo
Yuji Komatsuzaki, Mitsubishi Electric
(15:00 - 15:20)

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Nils Pohl
Ruhr Univ. Bochum
Hiroshi Okazaki
NTT DoCoMo, Inc.
Location
403B
Abstract

This session introduces recent advances in X to G band voltage controlled oscillator design techniques. It includes new design methods for octave-range multi-band oscillators, injection-locked oscillators, and wide tuning range oscillators with advanced technologies such as 16 nm FinFET and 22 nm FD-SOI.

Technical Papers
Abstract
Tu4C-1: Octave Frequency Range Triple-Band Low Phase Noise K/Ka-Band VCO with a New Dual-Path Inductor
Md. Aminul Hoque, Mohammad Chahardori, Pawan Agarwal, Mohammad Ali Mokri, Deukhyoun Heo
Md. Aminul Hoque, Washington State Univ.
(15:50 - 16:10)
Abstract
Tu4C-2: A Superharmonic Injection Based G-Band Quadrature VCO in CMOS
Xuan Ding, Hai Yu, Bo Yu, Zhiwei Xu, Qun Jane Gu
Xuan Ding, Univ. of California, Davis
(16:10 - 16:30)
Abstract
Tu4C-3: A Power Efficient 60-GHz Super-Regenerative Oscillator with 10-GHz Switching Rate in 22-nm FD-SOI CMOS
Ali Ferschischi, Hatem Ghaleb, Zoltán Tibenszky, Corrado Carta, Frank Ellinger
Ali Ferschischi, Technische Universität Dresden
(16:30 - 16:50)
Abstract
Tu4C-4: A 0.011-mm² 27.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191dBc/Hz FoM in 16-nm FinFET CMOS
Chi-Hsien Lin, Ying-Ta Lu, Hsien-Yuan Liao, Sean Chen, Alvin L.S. Loke, Tzu-Jin Yeh
Chi-Hsien Lin, TSMC
(16:50 - 17:10)
Abstract
Tu4C-5: An X-Band LC VCO Using a New Boosted Active Capacitor with 53% Tuning Range and -202.4dBc/Hz FoMT
Pawan Agarwal, Deukhyoun Heo
Mohammad Chahardori, Washington State Univ.
(17:10 - 17:30)
David Brown
BAE Systems
Mark van der Heijden
NXP Semiconductors
Location
408A
Abstract

This session presents InP and GaN broadband millimeter-wave power amplifiers up to 150 GHz. Innovations include process development, high power combining techniques, and circuit techniques.

Technical Papers
Abstract
Tu4F-1: High Output Power Ultra-Wideband Distributed Amplifier in InP DHBT Technology Using Diamond Heat Spreader
Tanjil Shivan, Maruf Hossain, Ralf Doerner, Tom K. Johansen, Ksenia Nosaeva, Hady Yacoub, Wolfgang Heinrich, Viktor Krozer
Tanjil Shivan, FBH
(15:50 - 16:10)
Abstract
Tu4F-2: Broadband PA Architectures with Asymmetrical Combining and Stacked PA Cells Across 50–70GHz and 64–110GHz in 250nm InP
Tushar Sharma, Zheng Liu, Chandrakanth R. Chappidi, Hooman Saeidi, Suresh Venkatesh, Kaushik Sengupta
Tushar Sharma, Princeton Univ.
(16:10 - 16:30)
Abstract
Tu4F-3: C to V-Band Cascode Distributed Amplifier Design Leveraging a Double Gate Length Gallium Nitride on Silicon Process
Patrick E. Longhi, Sergio Colangeli, Walter Ciccognani, Lorenzo Pace, Rémy Leblanc, Ernesto Limiti
Patrick E. Longhi, Università di Roma “Tor Vergata”
(16:30 - 16:50)
Abstract
Tu4F-4: A 20W GaN-on-Si Solid State Power Amplifier for Q-Band Space Communication Systems
R. Giofrè, F. Costanzo, A. Massari, A. Suriani, F. Vitulli, Ernesto Limiti
R. Giofrè, Università di Roma “Tor Vergata”
(16:50 - 17:10)
Abstract
Tu4F-5: Highly Linear & Efficient Power Spatium Combiner Amplifier with GaN HPA MMIC at Millimeter Wavelength Frequency
Soack Dae Yoon, John Kitt, Dylan Murdock, Eric Jackson, Michael Roberg, Gamal Hegazi, Patrick Courtney
Soack Dae Yoon, Qorvo
(17:10 - 17:30)

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Jeong-Sun Moon
HRL Laboratories
Kenneth Mays
Boeing
Location
408B
Abstract

RF and millimeter wave amplifiers are key elements in modern wireless and defense applications. Existing high speed transistor technologies are approaching their limits and current amplifier design practices focus on trade-offs between key performance parameters. With 5G deploying and upcoming millimeter wave systems for defense, next generation GaN transistor technologies are emerging. This session focuses of these emerging transistor technologies for these applications.

Technical Papers
Abstract
We1G-1: Emerging High Power mm-Wave RF Transistors
Young-Kai Chen, Abirami Sivananthan, Tsu-Hsi Chang
Tsu-Hsi Chang, HetInTec
(08:00 - 08:20)
Abstract
We1G-2: Advanced GaN HEMT Modeling Techniques and Power Amplifiers for Millimeter-Wave Applications
Shintaro Shinjo, Masatake Hangai, Yutaro Yamaguchi, Moriyasu Miyazaki
Shintaro Shinjo, Mitsubishi Electric
(08:20 - 08:40)
Abstract
We1G-3: Qorvo’s Emerging GaN Technologies for mmWave Applications
Y. Cao, V. Kumar, S. Chen, Y. Cui, Soack Dae Yoon, E. Beam, A. Xie, J. Jimenez, A. Ketterson, C. Lee, Douglas Linkhart, Anton Geiler
Y. Cao, Qorvo
(08:40 - 09:00)
Abstract
We1G-4: High-Speed Graded-Channel GaN HEMTs with Linearity and Efficiency
Jeong-sun Moon, Bob Grabar, Mike Antcliffe, Joel Wong, Chuong Dao, Peter Chen, Erdem Arkun, Isaac Khalaf, Andrea Corrion, James Chappell, Nivedhita Venkatesan, Patrick Fay
Jeong-sun Moon, HRL Laboratories
(09:00 - 09:20)
Abstract
We1G-5: Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification
Josephine Chang, Shamima Afroz, Brian Novak, Jordan Merkel, Ken Nagamatsu, Robert Howell
Josephine Chang, Northrop Grumman
(09:20 - 09:40)

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Leo de Vreede
Delft Univ. of Technology
Paul Draxler
MaXentric Technologies, LLC
Location
408B
Abstract

Load modulation based power amplifiers have been the workhorses in wireless networks for more than two decades. In this session, load modulation techniques are further enhanced, for their RF bandwidth, through the use of balanced structures and inverted DPA topologies. In addition, Doherty efficiency is further improved in power back-off by means of digitally controlled signal injection. 5G MIMO base stations needs are addressed including DPA miniaturization through MMIC integration, as well as, the capability to handle large video bandwidths.

Technical Papers
Abstract
We2G-1: Dual-Octave-Bandwidth RF-Input Pseudo-Doherty Load Modulated Balanced Amplifier with ⋝q10-dB Power Back-Off Range
Yuchen Cao, Kenle Chen
Yuchen Cao, Univ. of Central Florida
(10:10 - 10:30)
Abstract
We2G-2: Extend High Efficiency Range of Doherty Power Amplifier by Modifying Characteristic Impedance of Transmission Lines in Load Modulation Network
Jingzhou Pang, Yue Li, Chenhao Chu, Jun Peng, Xin Yu Zhou, Anding Zhu
Jingzhou Pang, Univ. College Dublin
(10:30 - 10:50)
Abstract
We2G-3: A Fully-Integrated GaN Doherty Power Amplifier Module with a Compact Frequency-Dependent Compensation Circuit for 5G Massive MIMO Base Stations
Shuichi Sakata, Katsuya Kato, Eri Teranishi, Takumi Sugitani, Rui Ma, Kevin Chuang, Yu-Chen Wu, Kei Fukunaga, Yuji Komatsuzaki, Kenichi Horiguchi, Koji Yamanaka, Shintaro Shinjo
Shuichi Sakata, Mitsubishi Electric
(10:50 - 11:10)
Abstract
We2G-4: 300W Dual Path GaN Doherty Power Amplifier with 65% Efficiency for Cellular Infrastructure Applications
Mir Masood, Srinidhi Embar R., Peter Rashev, John Holt, J.S. Kenney
Mir Masood, NXP Semiconductors
(11:10 - 11:30)
Abstract
We2G-5: Digitally Assisted Load Modulated Balanced Amplifier for 200W Cellular Infrastructure Applications
Srinidhi Embar R., Mir Masood, Tushar Sharma, Joseph Staudinger, Sagar K. Dhar, Peter Rashev, G. Tucker, Fadhel M. Ghannouchi
Srinidhi Embar R., NXP Semiconductors
(11:30 - 11:50)

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Marcus Da Silva
NI
Sherif Ahmed
Entrepreneur
Location
403A
Abstract

In this joint ARFTG-IMS session, a number of riveting nonlinear measurement topics are discussed. We begin with new error vector magnitude results on GaN power amplifiers. Additional papers cover synchronized, modulated nonlinear vector network analyzer measurements, multitone amplifier linearity characterization, and pulse profiling load pull analysis.

Technical Papers
Abstract
We3B-1: Broadband Error Vector Magnitude Characterization of a GaN Power Amplifier Using a Vector Network Analyzer
Alberto Maria Angelotti, Gian Piero Gibiino, Corrado Florian, Alberto Santarelli
Alberto Maria Angelotti, Univ. of Bologna
(15:50 - 16:10)
Abstract
We3B-2: Precisely Synchronized NVNA Setup for Digital Modulation Signal Measurements at Millimeter-Wave Test Bands
Yichi Zhang, Xiaotao Guo, Zilong Zhang, Zhao He, Aining Yang
Yichi Zhang, NIM
(16:10 - 16:30)
Abstract
We3B-3: Millimeter-Wave Power Amplifier Linearity Characterization Using Unequally Spaced Multi-Tone Stimulus
Vincent Gillet, Jean-Pierre Teyssier, Ahmad Al Hajjar, Ahmed Gasmi, Charles Edoua Kacou, Michel Prigent, Raymond Quéré
Vincent Gillet, XLIM (UMR 7252)
(16:30 - 16:50)
Abstract
We3B-4: Pulse Profiling Active Load Pull Measurements
Yashar Alimohammadi, Eigo Kuwata, Xuan Liu, Thoalfukar Husseini, James J. Bell, Lei Wu, Paul J. Tasker, Johannes Benedikt
Yashar Alimohammadi, Cardiff University
(16:50 - 17:10)
Abstract
We3B-5: Enhanced Wideband Active Load-Pull with a Vector Network Analyzer Using Modulated Excitations and Device Output Match Compensation
Alberto Maria Angelotti, Gian Piero Gibiino, Troels S. Nielsen, Dominique M. M.-P. Schreurs, Alberto Santarelli
Alberto Maria Angelotti, Univ. of Bologna
(17:10 - 17:30)
Dietmar Kissinger
Ulm Univ.
William Deal
Northrop Grumman Corp.
Location
403B
Abstract

This short session presents works in distributed mixers, sub-terahertz oscillators, and millimeter-wave true-time delay circuits

Technical Papers
Abstract
We3C-1: InP HBT Oscillators Operating up to 682GHz with Coupled-Line Load for Improved Efficiency and Output Power
Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, Jae-Sung Rieh
Jungsoo Kim, Korea Univ.
(15:50 - 16:10)
Abstract
We3C-2: A DC to 194-GHz Distributed Mixer in 250-nm InP DHBT Technology
Teruo Jyo, Munehiko Nagatani, Minoru Ida, Miwa Mutoh, Hitoshi Wakita, Naoki Terao, Hideyuki Nosaka
Teruo Jyo, NTT
(16:10 - 16:30)
Abstract
We3C-3: Broadband 110–170GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology
Alper Karakuzulu, M.H. Eissa, Dietmar Kissinger, Andrea Malignaggi
Alper Karakuzulu, IHP
(16:30 - 16:50)
John Wood
Wolfspeed, A Cree Company
Jonmei Yan
MaXentric Technologies, LLC
Location
408B
Abstract

In this session, we have two papers describing advanced DPD techniques for massive MIMO applications, considering OTA identification and predistorter complexity; and three papers describing novel approaches for envelope tracking power amplifiers, including a GaN MMIC modulator design, a floating source RF PA, and a novel Marx generator-based modulator.

Technical Papers
Abstract
We3G-1: Closed-Loop Sign Algorithms for Low-Complexity Digital Predistortion
Vesa Lampu, Lauri Anttila, Alberto Brihuega, Markus Allén, Mikko Valkama
Pablo Pascual Campo, Tampere University
(15:50 - 16:10)
Abstract
We3G-2: OTA-Based Data Acquisition and Signal Separation for Digital Predistortion of Multi-User MIMO Transmitters in 5G
Xiaoyu Wang, Yue Li, Chao Yu, Wei Hong, Anding Zhu
Xiaoyu Wang, Univ. College Dublin
(16:10 - 16:30)
Abstract
We3G-3: L-Band Floating-Ground RF Power Amplifier for Reverse-Type Envelope Tracking Systems
Sophie Paul, Wolfgang Heinrich, Olof Bengtsson
Sophie Paul, FBH
(16:30 - 16:50)
Abstract
We3G-4: High Efficiency, High Bandwidth Switch-Mode Envelope Tracking Supply Modulator
Florian Hühn, Felix Müller, Lars Schellhase, Wolfgang Heinrich, Andreas Wentzel
Florian Hühn, FBH
(16:50 - 17:10)
Abstract
We3G-5: Exploiting the Marx Generator as a 100MHz High-Speed Multilevel Supply Modulator
Peco Gjurovski, Lukas Huessen, Renato Negra
Peco Gjurovski, RWTH Aachen Univ.
(17:10 - 17:30)

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Markus Gardill
Universität Würzburg
Martin Vossiek
Friedrich-Alexander-Univ. Erlangen-Nürnberg
Location
403B
Abstract

This session is on advanced radar systems and concepts for automotive and vehicular applications. The topics range from modulation schemes for MIMO radar and in-depth analysis of radar noise performance, to concepts for speed over ground estimation and model-based and neural-network based super-resolution range and angle-of-arrival estimation techniques.

Technical Papers
Abstract
Th1C-1: A Fast-Chirp MIMO Radar System Using Beat Frequency FDMA with Single-Sideband Modulation
Minh Q. Nguyen, Reinhard Feger, Jonathan Bechter, Markus Pichler-Scheder, Andreas Stelzer
Minh Q. Nguyen, Johannes Kepler Universität Linz
(08:00 - 08:20)
Abstract
Th1C-2: A System Analysis of Noise Influences on the Imaging Performance of Millimeter Wave MIMO Radars
André Dürr, Dominik Schwarz, Christian Waldschmidt
André Dürr, Universität Ulm
(08:20 - 08:40)
Abstract
Th1C-3: Millimeter-Wave Interferometric Radar for Speed-Over-Ground Estimation
Eric Klinefelter, Jeffrey A. Nanzer
Eric Klinefelter, Michigan State Univ.
(08:40 - 09:00)
Abstract
Th1C-4: Root-MUSIC Based Power Estimation Method with Super-Resolution FMCW Radar
Tatsuya Iizuka, Yohei Toriumi, Fumihiko Ishiyama, Jun Kato
Tatsuya Iizuka, NTT
(09:00 - 09:20)
Abstract
Th1C-5: Learning Representations for Neural Networks Applied to Spectrum-Based Direction-of-Arrival Estimation for Automotive Radar
Maximilian Gall, Jonas Fuchs, Thomas Horn
Markus Gardill, InnoSenT
(09:20 - 09:40)
Kaushik Sengupta
Princeton Univ.
Joe Qiu
Army Research Office
Location
408B
Abstract

The session will showcase state-of-the-art advancements in silicon-based power amplifier architectures and technology for 5G and automotive applications. The session will demonstrate techniques that range from broadband design and back-off efficiency enhancement to fully digital PA architectures. The first five papers demonstrate these techniques from 22 to 90 GHz and the last paper discusses a novel hybrid digital transmitter architecture combining CMOS and LDMOS technologies for base station applications.

Technical Papers
Abstract
Th1G-1: A 28GHz Linear and Efficient Power Amplifier Supporting Wideband OFDM for 5G in 28nm CMOS
Yen-Wei Chang, Tsung-Ching Tsai, Jie-Ying Zhong, Jeng-Han Tsai, Tian-Wei Huang
Yen-Wei Chang, National Taiwan Univ.
(08:00 - 08:20)
Abstract
Th1G-2: A Balanced Power Amplifier with Asymmetric Coupled-Line Couplers and Wilkinson Baluns in a 90nm SiGe BiCMOS Technology
Yunyi Gong, John D. Cressler
Yunyi Gong, Georgia Tech
(08:20 - 08:40)
Abstract
Th1G-3: Load Modulated Balanced mm-Wave CMOS PA with Integrated Linearity Enhancement for 5G Applications
Chandrakanth R. Chappidi, Tushar Sharma, Zheng Liu, Kaushik Sengupta
Chandrakanth R. Chappidi, Princeton Univ.
(08:40 - 09:00)
Abstract
Th1G-4: A 22–37GHz Broadband Compact Linear mm-Wave Power Amplifier Supporting 64-/256-/512-QAM Modulations for 5G Communications
Fei Wang, Adam Wang, Hua Wang
Fei Wang, Georgia Tech
(09:00 - 09:10)
Abstract
Th1G-5: Two W-Band Wideband CMOS mmW PAs for Automotive Radar Transceivers
Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang
Yuting Xue, East China Normal Univ.
(09:10 - 09:20)
Abstract
Th1G-6: An 18.5W Fully-Digital Transmitter with 60.4% Peak System Efficiency
R.J. Bootsman, D.P.N. Mul, Y. Shen, R.M. Heeres, F. van Rijs, M.S. Alavi, L.C.N. de Vreede
R.J. Bootsman, Technische Universiteit Delft
(09:20 - 09:40)
Deuk Heo
Washington State Univ.
James Buckwalter
Univ. of California, Santa Barbara
Location
403A
Abstract

This late-breaking news session reports breakthrough results on millimeter-wave power amplifiers, transmitters, and receive beamformers based on advanced silicon processes. Advanced FinFet and CMOS SOI processes demonstrate PAs at 28 GHz and E-band. Novel approaches to load modulation are demonstrated in a multi-element transmit array. Finally, a state-of-the-art broadband receive beamformer is demonstrated with low noise figure.

Technical Papers
Abstract
Th1B-1: An E-Band Power Amplifier Using High Power RF Device with Hybrid Work Function and Oxide Thickness in 22nm Low-Power FinFET
Qiang Yu, Yi-Shin Yeh, Jeffrey Garret, Jabeom Koo, Saurabh Morarka, Said Rami, Guannan Liu, Hyung-Jin Lee
Qiang Yu, Intel
(08:00 - 08:20)
Abstract
Th1B-2: A Highly Rugged 19dBm 28GHz PA Using Novel PAFET Device in 45RFSOI Technology Achieving Peak Efficiency Above 48%
Shafiullah Syed, Sameer Jain, Dimitri Lederer, Wen Liu, Elanchezhian Veeramani, Baljit Chandhoke, Arvind Kumar, Greg Freeman
Shafiullah Syed, GLOBALFOUNDRIES
(08:20 - 08:40)
Abstract
Th1B-3: Efficiency Enhancement Technique Using Doherty-Like Over-The-Air Spatial Combining in a 28GHz CMOS Phased-Array Transmitter
Avraham Sayag, Itamar Melamed, Emanuel Cohen
Avraham Sayag, Technion
(08:40 - 09:00)
Abstract
Th1B-4: A Multi-Standard 15–57GHz 4-Channel Receive Beamformer with 4.8dB Midband NF for 5G Applications
Abdulrahman A. Alhamed, Oguz Kazan, Gabriel M. Rebeiz
Abdulrahman A. Alhamed, Univ. of California, San Diego
(09:00 - 09:20)

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Christian Waldschmidt
Ulm Univ.
Martin Vossiek
Ulm Univ.
Location
403B
Abstract

Microwave and millimeter wave transmitters and receivers have been developed in Si technologies, which is attractive for the development of networked and distributed systems. Such systems promise much better imaging and or sensing properties than single transceiver systems. This session addresses such systems, in particular architectures, hardware realizations, the impact of hardware impairments, and low level signal processing approaches.

Technical Papers
Abstract
Th2C-1: A Self-Mixing Receiver for Wireless Frequency Synchronization in Coherent Distributed Arrays
Serge Mghabghab, Jeffrey A. Nanzer
Serge Mghabghab, Michigan State Univ.
(10:10 - 10:30)
Abstract
Th2C-2: A Digital Interferometric Array with Active Noise Illumination for Millimeter-Wave Imaging at 13.7fps
Stavros Vakalis, Jeffrey A. Nanzer
Stavros Vakalis, Michigan State Univ.
(10:30 - 10:50)
Abstract
Th2C-3: Wireless Coherent Full-Duplex Double-Sided Two-Way Ranging (CFDDS-TWR) Approach with Phase Tracking Based Multipath Suppression for Submillimeter Accuracy Displacement Sensing
Michael Gottinger, Marcel Hoffmann, Martin Vossiek
Marcel Hoffmann, FAU Erlangen-Nürnberg
(10:50 - 11:10)
Abstract
Th2C-4: Phase Recovery in Sensor Networks Based on Incoherent Repeater Elements
David Werbunat, Benedikt Meinecke, Maximilian Steiner, Christian Waldschmidt
David Werbunat, Universität Ulm
(11:10 - 11:30)
Abstract
Th2C-5: Fusion of Radar and Communication Information for Tracking in OFDM Automotive Radar at 24GHz
Jessica B. Sanson, Daniel Castanheira, Atilio Gameiro, Paulo P. Monteiro
Jessica B. Sanson, Instituto de Telecomunicações
(11:30 - 11:50)
Jeremy Dunworth
Qualcomm Research
Donald LaFrance
Lockheed Martin Corp.
Location
408B
Abstract

Presentations within this session include integrated front ends for a wide range of frequencies used in phased arrays. This session will commence with two radar papers, followed by a Ka-band communication front end and an 8-channel K-band phase shifter, and will conclude with a wideband GaN front end.

Technical Papers
Abstract
Th2G-1: A Fundamental-Frequency 122GHz Radar Transceiver with 5.3dBm Single-Ended Output Power in a 130nm SiGe Technology
Erick Aguilar, Vadim Issakov, Robert Weigel
Erick Aguilar, FAU Erlangen-Nürnberg
(10:10 - 10:30)
Abstract
Th2G-2: An Integrated Bistatic 4TX/4RX Six-Port MIMO-Transceiver at 60GHz in a 130-nm SiGe BiCMOS Technology for Radar Applications
Matthias Voelkel, Stefan Pechmann, Herman Jalli Ng, Dietmar Kissinger, Robert Weigel, Amelie Hagelauer
Matthias Voelkel, FAU Erlangen-Nürnberg
(10:30 - 10:50)
Abstract
Th2G-3: A Power Efficient BiCMOS Ka-Band Transmitter Front-End for SATCOM Phased-Arrays
Soroush Rasti-Boroujeni, A. Wyrzykowska, M. Mazaheri, A. Palizban, S. Ituah, A. El-Gouhary, G. Chen, H. Gharaei-Garakani, M. Nezhad-Ahmadi, S. Safavi-Naeini
Soroush Rasti-Boroujeni, Univ. of Waterloo
(10:50 - 11:10)
Abstract
Th2G-4: A K-Band Low-Complexity Modular Scalable Wide-Scan Phased Array
Fatemeh Akbar, Amir Mortazawi
Fatemeh Akbar, Univ. of Michigan
(11:10 - 11:30)
Abstract
Th2G-5: A Compact Ultra-Broadband GaN MMIC T/R Front-End Module
Qian Lin, Haifeng Wu, Yijun Chen, Liulin Hu, Shanji Chen, Xiaoming Zhang
Qian Lin, Qinghai Nationalities University
(11:30 - 11:50)
Nils Pohl
Ruhr Univ. Bochum
James Buckwalter
Univ. of California, Santa Barbara
Location
403A
Abstract

This late-breaking news session reports breakthrough experimental results on millimeter-wave power amplifiers above 200 GHz using GaN and InP HEMTs, low insertion loss switches based on InP HBT processes, and integration of complex systems using SiGe for a reflectometer and frequency synthesizer.

Technical Papers
Abstract
Th2B-1: First Demonstration of G-Band Broadband GaN Power Amplifier MMICs Operating Beyond 200GHz
Maciej Ćwikliński, Peter Brückner, Stefano Leone, Sebastian Krause, Christian Friesicke, Hermann Maßler, Rüdiger Quay, Oliver Ambacher
Maciej Ćwikliński, Fraunhofer IAF
(10:10 - 10:30)
Abstract
Th2B-2: 475-GHz 20-dB-Gain InP-HEMT Power Amplifier Using Neutralized Common-Source Architecture
H. Hamada, T. Tsutsumi, H. Matsuzaki, H. Sugiyama, Hideyuki Nosaka
H. Hamada, NTT
(10:30 - 10:50)
Abstract
Th2B-3: A High-Isolation and Highly Linear Super-Wideband SPDT Switch in InP DHBT Technology
Tanjil Shivan, Maruf Hossain, Ralf Doerner, Tom K. Johansen, Ksenia Nosaeva, Hady Yacoub, Wolfgang Heinrich, Viktor Krozer
Tanjil Shivan, FBH
(10:50 - 11:10)
Abstract
Th2B-4: 240-GHz Reflectometer with Integrated Transducer for Dielectric Spectroscopy in a 130-nm SiGe BiCMOS Technology
Defu Wang, M.H. Eissa, Klaus Schmalz, Thomas Kämpfe, Dietmar Kissinger
Defu Wang, Fraunhofer IPMS
(11:10 - 11:30)
Abstract
Th2B-5: A 311.6GHz Phase-Locked Loop in 0.13µm SiGe BiCMOS Process with -90dBc/Hz In-Band Phase Noise
Yuan Liang, Chirn Chye Boon, Yangtao Dong, Qian Chen, Zhe Liu, Chenyang Li, Thomas Mausolf, Dietmar Kissinger, Yong Wang, Herman Jalli Ng
Yong Wang, UESTC
(11:30 - 11:50)

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Samir El-Ghazaly
Univ. of Arkansas
George Haddad
National Science Foundation
Location
408a
Abstract

Dr. Robert J. Trew: DECEMBER 8, 1944 - FEBRUARY 24, 2019

This session attempts to capture the career and life of Dr. Robert Trew as an engineer, educator, scientist, society leader, government official, hero of the U.S. Army Research Office, musician, photographer, and above all husband and father.

Bob received his Bachelor of Electrical Engineering from Kettering University in 1968, and M.S. and Ph.D. degrees in electrical engineering from the University of Michigan in 1969 and 1975.

Bob was the Alton and Mildred Lancaster Distinguished Professor (Emeritus) and former head of the Department of Electrical and Computer Engineering in NC State’s College of Engineering. He was a department head for a collective 11 years at three major research universities: Case Western Reserve University, Virginia Polytechnic Institute and State University, and NC State University. 

On the government side, Bob served as a program manager at the Army Research Office, Director of Research for the Office of the Secretary of Defense at the U.S. Department of Defense, and Director of the Division of the Electrical, Communications and Cyber Systems at the National Science Foundation. 

As a scientist, Bob made important contributions to research on semiconductor devices and microwave computer-aided design. He was a highly regarded mentor and leader. His accomplishments are well recognized within MTT-S and were acknowledged by granting him the Pioneer Award and the Career Award.

Bob served as the President of the IEEE Microwave Theory and Techniques Society in 2004.

Technical Papers
Abstract
Th3B-1: Remembering Dr. Robert James Trew
Heather M. Trew
Heather M. Trew, U.S. Department of the Treasury
(13:40 - 14:00)
Abstract
Th3B-2: Following the Evolution of High-Frequency Electronics: From Diodes to Transistors — A Memorial to the Life of Dr. Robert J. Trew (1944–2019)
Madhu S. Gupta
Madhu S. Gupta, Univ. of California, San Diego
(14:00 - 14:20)
Abstract
Th3B-3: Robert J. Trew and the Microwave Community
Mike Golio
Mike Golio, Golio Endeavors
(14:20 - 14:40)
Abstract
Th3B-4: Bob Trew: Teacher, Researcher, Mentor, and Friend
Alfy Riddle
Alfy Riddle, Quanergy Systems
(14:40 - 15:00)
Sorin Voinigescu
Univ. of Toronto
Cynthia Hang
Raytheon Company
Location
408B
Abstract

This session covers the key building blocks used in beamformers and phased arrays ranging from novel ultrawideband baluns, multi-bit phase shifters and attenuators, high isolation antenna switches, and large power mm-wave detectors.

Technical Papers
Abstract
Th3G-1: A DC-32GHz 7-Bit Passive Attenuator with Capacitive Compensation Bandwidth Extension Technique in 55nm CMOS
Zijiang Zhang, Nayu Li, Huiyan Gao, Min Li, Shaogang Wang, Yen-Cheng Kuan, Xiaopeng Yu, Zhiwei Xu
Zijiang Zhang, Zhejiang Univ.
(13:40 - 14:00)
Abstract
Th3G-2: A Low Power 60GHz 6V CMOS Peak Detector
Zoltán Tibenszky, Corrado Carta, Frank Ellinger
Zoltán Tibenszky, Technische Universität Dresden
(14:00 - 14:20)
Abstract
Th3G-3: A 35GHz Hybrid π-Network High-Gain Phase Shifter with 360° Continuous Phase Shift Range
Dong Wei, Xuan Ding, Hai Yu, Qun Jane Gu, Zhiwei Xu, Yen-Cheng Kuan, Shunli Ma, Junyan Ren
Dong Wei, Fudan Univ.
(14:20 - 14:40)
Abstract
Th3G-4: A 68-dB Isolation 1.0-dB Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network
Xi Fu, Yun Wang, Zheng Li, Atsushi Shirane, Kenichi Okada
Xi Fu, Tokyo Institute of Technology
(14:40 - 14:50)
Abstract
Th3G-5: A CMOS Balun with Common Ground and Artificial Dielectric Compensation Achieving 79.5% Fractional Bandwidth and <2° Phase Imbalance
Geliang Yang, Keping Wang
Rui Chen, Southeast Univ.
(14:50 - 15:00)
Abstract
Th3G-6: A 20.8–41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process
Chieh-Wei Wang, Yu-Chun Chen, Wen-Jie Lin, Jeng-Han Tsai, Tian-Wei Huang
Chieh-Wei Wang, National Taiwan Univ.
(15:00 - 15:10)