Qorvo’s Emerging GaN Technologies for mmWave Applications

Qorvo’s recent GaN related research efforts on both GaN based transistors and passive devices like self-biased circulators will be discussed. Commercial mmW Applications are demanding for GaN technology with more aggressive device scaling, starting from the gate length of 150 nm, towards 90 nm and below. Qorvo has developed 90 nm GaN (GaN09) HEMT technology based on an AlN/GaN based digital barrier. This new structure, combined with Qorvo’s T-Gate process, has enabled great efficiency improvement in device performance with the peak PAE of 51% and Pout of 2.25 W/mm at 35 GHz. Qorvo’s new Ka-band self-biased circulator technology integrated on GaN/SiC provides superior SWaP performance by showing an insertion loss of <0.5 dB and isolation >25 dB within an active device junction area of 1.5 mm in diameter. This technology will pave the path for 5G duplex communication systems using phased array antennas.