2.5 to 10.0 GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA

This paper reports on a Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed amplifiers are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to 44% across 2.5 to 11.0 GHz with chip size of 4.2 mm2. The other is a two-way combined HPA which demonstrates output power of 27 to 61 W, PAE of 24 to 43% across 2.5 to 10.0 GHz with chip size of 9.6mm2. These results demonstrate highest output power and power density among wideband amplifiers ever reported.