Field, Device and Circuit Tech.

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Pekka Kangaslahti
Jet Propulsion Lab
George Duh
BAE Systems
Location
403A
Abstract

This session focuses on state-of-the-art low-noise circuit results with applications to quantum computing, radio astronomy, and millimeter-wave communications. First, a cryogenic SiGe LNA achieving record noise performance for silicon from 4-8 GHz will be presented. Next, the first ever W-band SiGe cryogenic LNA will be described. The third talk will focus on a broadband InP HEMT cryogenic LNA covering the entire 5-35 GHz frequency range. This will be followed by the presentation of a single-chip IQ downconverter MMIC covering the full W-band. In the final talk of the session a state-of-the-art CMOS D-band LNA operating from 125.5-157 GHz will be described.

Technical Papers
Abstract
Tu3B-1: A 1mW Cryogenic LNA Exploiting Optimized SiGe HBTs to Achieve an Average Noise Temperature of 3.2K from 4–8GHz
Wei-Ting Wong, Holger Rücker, Joseph C. Bardin
Mohsen Hosseini, UMass Amherst
(13:40 - 14:00)
Abstract
Tu3B-2: Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier
Mikko Varonen, Nima Sheikhipoor, Bekari Gabritchidze, Kieran Cleary, Henrik Forstén, Holger Rücker, Mehmet Kaynak
Mikko Varonen, VTT Technical Research Centre of Finland
(14:00 - 14:20)
Abstract
Tu3B-3: X- to Ka-Band Cryogenic LNA Module for Very Long Baseline Interferometry
Andy Fung, Lorene Samoska, James Bowen, Steven Montanez, Jacob Kooi, Melissa Soriano, Christopher Jacobs, Raju Manthena, Daniel Hoppe, Ahmed Akgiray, Richard Lai, Xiaobing Mei, Michael Barsky
Andy Fung, Jet Propulsion Lab
(14:20 - 14:40)
Abstract
Tu3B-4: A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers
Fabian Thome, Erdin Ture, Arnulf Leuther, Frank Schäfer, Alessandro Navarrini, Patrice Serres, Oliver Ambacher
Fabian Thome, Fraunhofer IAF
(14:40 - 15:00)
Abstract
Tu3B-5: A 125.5–157GHz 8dB NF and 16dB of Gain D-Band Low Noise Amplifier in CMOS SOI 45nm
Abdelaziz Hamani, Alexandre Siligaris, Benjamin Blampey, Cedric Dehos, José Luis Gonzalez Jimenez
Abdelaziz Hamani, CEA-LETI
(15:00 - 15:20)

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Chinchun Meng
National Chiao Tung Univ.
Luciano Boglione
Naval Research Laboratory
Location
403A
Abstract

This session presents LNAs from C to D band: the first paper demonstrates a new gain equalization technique, the second paper addresses the frequency tunability for 5G transceivers, the third paper shows flat gain response at mm-wave, the fourth paper shows a K/Ka/V band variable gain LNA, and the last paper demonstrates a new design exploiting magnetic coupling at E band

Technical Papers
Abstract
Tu4B-1: A 6.5–12GHz Balanced Variable Gain Low-Noise Amplifier with Frequency-Selective Non-Foster Gain Equalization Technique
Huiyan Gao, Nayu Li, Min Li, Shaogang Wang, Zijiang Zhang, Yen-Cheng Kuan, Xiaopeng Yu, Qun Jane Gu, Zhiwei Xu
Huiyan Gao, Zhejiang Univ.
(15:50 - 16:10)
Abstract
Tu4B-2: A Compact Frequency-Tunable VGA for Multi-Standard 5G Transceivers
Roee Ben Yishay, Danny Elad
Roee Ben Yishay, ON Semiconductor
(16:10 - 16:30)
Abstract
Tu4B-3: A CMOS Band-Pass Low Noise Amplifier with Excellent Gain Flatness for mm-Wave 5G Communications
Han-Woong Choi, Sunkyu Choi, Choul-Young Kim
Han-Woong Choi, Chungnam National University
(16:30 - 16:50)
Abstract
Tu4B-4: A Tri (K/Ka/V)-Band Monolithic CMOS Low Noise Amplifier with Shared Signal Path and Variable Gains
Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, Rulin Huang, Kuei-Ann Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan
Chia-Jen Liang, National Chiao Tung Univ.
(16:50 - 17:10)
Abstract
Tu4B-5: A 64.5–88GHz Coupling-Concerned CMOS LNA with >10dB Gain and 5dB Minimum NF
Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang
Kaijuan Zhang, East China Normal Univ.
(17:10 - 17:20)

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Jasmin Grosinger
Graz Univ. of Technology
Etienne Perret
Grenoble Institute of Technology
Location
403A
Abstract

The session presents new advancements in wireless sensors targeting sensing applications such as material, biomedical, and capacitive sensing. The novel wireless sensors are based on well-chosen communication technologies to serve its specific applications, for example, passive backscatter, active far-field, and passive near-field communication technologies. A particular focus of the session lies on integrated wireless sensors based on the CMOS technology.

Technical Papers
Abstract
We1B-1: Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution
Meissa Babay, Clement Hallepee, Claire Dalmay, Bruno Barelaud, Emre Can Durmaz, Canan Baristiran Kaynak, Mehmet Kaynak, David Cordeau, Arnaud Pothier
Arnaud Pothier, XLIM (UMR 7252)
(08:00 - 08:20)
Abstract
We1B-2: An Integrated Battery-Less Wirelessly Powered RFID Tag with Clock Recovery and Data Transmitter for UWB Localization
Hamed Rahmani, Aydin Babakhani
Hamed Rahmani, Univ. of California, Los Angeles
(08:20 - 08:40)
Abstract
We1B-3: A Silicon-Based Closed-Loop 256-Pixel Near-Field Capacitive Sensing Array with 3-ppm Sensitivity and Selectable Frequency Shift Gain
Jia Zhou, Chia-Jen Liang, Christopher Chen, Jieqiong Du, Rulin Huang, Richard Al Hadi, James C.M. Hwang, Mau-Chung Frank Chang
Jia Zhou, Univ. of California, Los Angeles
(08:40 - 09:00)
Abstract
We1B-4: All-Digital Single Sideband (SSB) Bluetooth Low Energy (BLE) Backscatter with an Inductor-Free, Digitally-Tuned Capacitance Modulator
James Rosenthal, Matthew S. Reynolds
James Rosenthal, Univ. of Washington
(09:00 - 09:20)
Abstract
We1B-5: Microwave Encoders with Synchronous Reading and Direction Detection for Motion Control Applications
Ferran Paredes, Cristian Herrojo, Ferran Martín
Ferran Paredes, Univ. Autònoma de Barcelona
(09:20 - 09:40)

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Kazuya Yamamoto
Mitsubishi Electric Corp.
Changzhan Gu
Shanghai Jiao Tong Univ.
Location
403A
Abstract

This session presents a variety of radar and backscatter sensor systems for applications such as negative resistance-based backscatter systems, reflector tags, 3D radar sensing, and high linear motion sensing.

Technical Papers
Abstract
We2B-1: Nonlinear Negative Resistance-Based Harmonic Backscatter
Karan Gumber, Francesco Amato, Corinne Dejous, Simon Hemour
Karan Gumber, IMS (UMR 5218)
(10:10 - 10:30)
Abstract
We2B-2: A 5.8GHz Fully-Tunnel-Diodes-Based 20µW, 88mV, and 48dB-Gain Fully-Passive Backscattering RFID Tag
Aline Eid, Jimmy Hester, Manos M. Tentzeris
Aline Eid, Georgia Tech
(10:30 - 10:50)
Abstract
We2B-3: Active Reflector Tag for Millimeter Wave Harmonic Radar at 61/122GHz ISM Band Based on 130nm-BiCMOS SiGe:C Technology
Steffen Hansen, Christian Bredendiek, Nils Pohl
Steffen Hansen, Fraunhofer FHR
(10:50 - 11:10)
Abstract
We2B-4: Long-Range Zero-Power Multi-Sensing in Industrial Environment Using Polarization Diversity and 3D Radar Imagery
Dominique Henry, Timothée Marchal, Julien Philippe, Hervé Aubert, Patrick Pons
Dominique Henry, LAAS
(11:10 - 11:30)
Abstract
We2B-5: Noncontact High-Linear Motion Sensing Based on a Modified Differentiate and Cross-Multiply Algorithm
Wei Xu, Changzhan Gu, Jun-Fa Mao
Wei Xu, Shanghai Jiao Tong Univ.
(11:30 - 11:50)

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Alessandra Costanzo
Univ. of Bologna
Smail Tedjini
Univ of Grenoble-Alpes France
Location
406AB
Abstract

The recent advances for novel topologies and layout realizations of high-efficiency rectenna and rectifiers for RF energy harvesting are proposed. Both narrowband and broadband solutions with record efficiencies at ultra-low power are discussed using discrete and integrated CMOS solutions.

Technical Papers
Abstract
Th1E-1: A W-Band Rectenna Using On-Chip CMOS Switching Rectifier and On-PCB Tapered Slot Antenna Achieving 25% Effective-Power-Conversion Efficiency for Wireless Power Transfer
Pingyang He, Jie Xu, Dixian Zhao
Pingyang He, Southeast Univ.
(08:00 - 08:20)
Abstract
Th1E-2: An Ultra-Low-Power Power Management Circuit with Output Bootstrapping and Reverse Leakage Reduction Function for RF Energy Harvesting
Zizhen Zeng, Shanpu Shen, Bo Wang, Johan J. Estrada-López, Ross Murch, Edgar Sánchez-Sinencio
Zizhen Zeng, Texas A&M Univ.
(08:20 - 08:40)
Abstract
Th1E-3: Compact and High Efficiency Rectifier Design Based on Microstrip Coupled Transmission Line for Energy Harvesting
Fading Zhao, Daniele Inserra, Guangjun Wen
Fading Zhao, UESTC
(08:40 - 09:00)
Abstract
Th1E-4: High-Efficiency Sub-1GHz Flexible Compact Rectenna Based on Parametric Antenna-Rectifier Co-Design
Mahmoud Wagih, Alex S. Weddell, Steve Beeby
Mahmoud Wagih, Univ. of Southampton
(09:00 - 09:20)
Abstract
Th1E-5: 920MHz Band High Sensitive Rectenna with the High Impedance Folded Dipole Antenna on the Artificial Magnetic Conductor Substrate
Nobuhiko Yasumaru, Naoki Sakai, Kenji Itoh, Toshiki Tamura, Shigeru Makino
Nobuhiko Yasumaru, Kanazawa Institute of Technology
(09:20 - 09:40)

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Nuno Borges Carvalho
Instituto De Telecomunicacoes
Marco Dionigi
Univ. of Perugia
Location
406AB
Abstract

In this session novel applications of wireless power transfer to different technologies is presented ranging from low frequency to millimeter wave. Applications spanning from under water, textile, automotive and space will be discussed.

Technical Papers
Abstract
Th2E-1: High Isolation Simultaneous Wireless Power and Information Transfer System Using Coexisting DGS Resonators and Figure-8 Inductors
Adel Barakat, Ramesh K. Pokharel, Shimaa Alshhawy, Kuniaki Yoshitomi, Shigeo Kawasaki
Adel Barakat, Kyushu Univ.
(10:10 - 10:30)
Abstract
Th2E-2: Conductive Coupler for Wireless Power Transfer Under Seawater
Masaya Tamura, Kousuke Murai, Marimo Matsumoto
Masaya Tamura, Toyohashi University of Technology
(10:30 - 10:50)
Abstract
Th2E-3: The K-Band Communication Transmitter/Receiver Powered by the C-Band HySIC Energy Harvester with Multi-Sensors
Satoshi Yoshida, Kentaro Matsuura, Daisuke Kobuchi, Naoto Yabuta, Toshihiro Nakaoka, Kenjiro Nishikawa, Shigeo Kawasaki
Shigeo Kawasaki, JAXA
(10:50 - 11:00)
Abstract
Th2E-4: A Wireless Power Transfer System (WPTS) Using Misalignment Resilient, On-Fabric Resonators for Wearable Applications
Dieff Vital, John L. Volakis, Shubhendu Bhardwaj
Dieff Vital, Florida International Univ.
(11:00 - 11:20)
Abstract
Th2E-5: A 3D Rectenna with All-Polarization and Omnidirectional Capacity for IoT Applications
Sheng Wang, Hong-Yeh Chang
Sheng Wang, National Central Univ.
(11:20 - 11:30)
Abstract
Th2E-6: RF Energy On-Demand for Automotive Applications
G. Paolini, M. Shanawani, A. Costanzo, F. Benassi, D. Masotti
G. Paolini, Univ. of Bologna
(11:30 - 11:50)

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Hasan Sharifi
HRL Laboratories
James Buckwalter
Univ. of California, Santa Barbara
Location
403A
Abstract

This late-breaking news session reports breakthrough experimental results on III-V millimeter-wave PAs and LNAs. A high-power broadband (2-20 GHz) amplifier is demonstrated in a GaN process. Record high efficiency results for InP HBT-based power amplifiers are presented. Finally, a low-power, cryogenic InP HEMT LNA is presented that offers adjustable gain/noise figure based on power consumption.

Technical Papers
Abstract
Th3E-1: A 20W 2–20GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Transformer-Based Power Combiner
Michael Roberg, Manyam Pilla, Thi Ri Mya Kywe, Robert Flynt, Nguyenvu Chu
Michael Roberg, Qorvo
(13:40 - 14:00)
Abstract
Th3E-2: A 120-mW, Q-Band InP HBT Power Amplifier with 46% Peak PAE
Andrea Arias-Purdue, Petra Rowell, Miguel Urteaga, Keisuke Shinohara, Andy Carter, Josh Bergman, Kang Ning, Mark J.W. Rodwell, James F. Buckwalter
Andrea Arias-Purdue, Teledyne Scientific & Imaging
(14:00 - 14:20)
Abstract
Th3E-3: Transformer-Based Broadband mm-Wave InP PA Across 42–62GHz with Enhanced Linearity and Second Harmonic Engineering
Zheng Liu, Tushar Sharma, Chandrakanth R. Chappidi, Suresh Venkatesh, Kaushik Sengupta
Zheng Liu, Princeton Univ.
(14:20 - 14:40)
Abstract
Th3E-4: A 300-µW Cryogenic HEMT LNA for Quantum Computing
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jörgen Stenarson, Jan Grahn
Eunjung Cha, Chalmers Univ. of Technology
(14:40 - 15:00)