This session focuses on state-of-the-art low-noise circuit results with applications to quantum computing, radio astronomy, and millimeter-wave communications. First, a cryogenic SiGe LNA achieving record noise performance for silicon from 4-8 GHz will be presented. Next, the first ever W-band SiGe cryogenic LNA will be described. The third talk will focus on a broadband InP HEMT cryogenic LNA covering the entire 5-35 GHz frequency range. This will be followed by the presentation of a single-chip IQ downconverter MMIC covering the full W-band. In the final talk of the session a state-of-the-art CMOS D-band LNA operating from 125.5-157 GHz will be described.
This session presents LNAs from C to D band: the first paper demonstrates a new gain equalization technique, the second paper addresses the frequency tunability for 5G transceivers, the third paper shows flat gain response at mm-wave, the fourth paper shows a K/Ka/V band variable gain LNA, and the last paper demonstrates a new design exploiting magnetic coupling at E band
The session presents new advancements in wireless sensors targeting sensing applications such as material, biomedical, and capacitive sensing. The novel wireless sensors are based on well-chosen communication technologies to serve its specific applications, for example, passive backscatter, active far-field, and passive near-field communication technologies. A particular focus of the session lies on integrated wireless sensors based on the CMOS technology.
This session presents a variety of radar and backscatter sensor systems for applications such as negative resistance-based backscatter systems, reflector tags, 3D radar sensing, and high linear motion sensing.
The recent advances for novel topologies and layout realizations of high-efficiency rectenna and rectifiers for RF energy harvesting are proposed. Both narrowband and broadband solutions with record efficiencies at ultra-low power are discussed using discrete and integrated CMOS solutions.
In this session novel applications of wireless power transfer to different technologies is presented ranging from low frequency to millimeter wave. Applications spanning from under water, textile, automotive and space will be discussed.
This late-breaking news session reports breakthrough experimental results on III-V millimeter-wave PAs and LNAs. A high-power broadband (2-20 GHz) amplifier is demonstrated in a GaN process. Record high efficiency results for InP HBT-based power amplifiers are presented. Finally, a low-power, cryogenic InP HEMT LNA is presented that offers adjustable gain/noise figure based on power consumption.