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Active Components

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Frederick Raab
Green Mountain Radio Research
Marc Franco
Qorvo
Location
157BC
Abstract

This session includes a selection of papers covering HF/VHF/UHF technologies in power amplification, linearization, and antennas.

Technical Papers
Abstract
Tu1D-1: Broadband Outphasing Transmitter Using Class-E Power Amplifiers
Ramon A. Beltran
Ramon A. Beltran, Ophir RF
(08:00 - 08:20)
Abstract
Tu1D-2: UHF Class E/F2 Outphasing Transmitter for 12dB PAPR Signals
David Vegas, Jose-Ramon Perez-Cisneros, M. Nieves Ruiz, José A. García
David Vegas, Universidad de Cantabria
(08:20 - 08:40)
Abstract
Tu1D-3: A Baseband Feedback Approach to Linearization of a UHF Power Amplifier
William Sear, Taylor W. Barton
William Sear, University of Colorado Boulder
(08:40 - 09:00)
Abstract
Tu1D-4: Novel High Efficiency Power Amplifier Mode Using Open Circuit Harmonic Loading
Tushar Sharma, Sagar K. Dhar, Ramzi Darraji, Damon G. Holmes, Vince Mallette, Jeffrey K. Jones, Fadhel M. Ghannouchi
Tushar Sharma, Princeton Univ.
(09:00 - 09:20)
Abstract
Tu1D-5: High Efficiency Bandwidth Electrically Small Antennas for Compact Wireless Communication Systems
Jean Paul Santos, Foad Fereidoony, Maziar Hedayati, Yuanxun Ethan Wang
Jean Paul Santos, Univ. of California, Los Angeles
(09:20 - 09:30)
Abstract
Tu1D-6: Design of a Voltage-Controlled Programmable-Gain Amplifier in 65-nm CMOS Technology
Hang Liu, Xi Zhu, Kiat Seng Yeo
Muting Lu, SUTD
(09:30 - 09:40)

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Shirin Montazeri
Qualcomm
Luciano Boglione
U.S. Naval Research Laboratory
Location
157BC
Abstract

This exciting session presents advancements in low noise components embracing cutting edge sensing applications. The papers in this session present innovative circuit techniques as well as technology enhancement across a wide range of operating temperatures. Integrated circuits and packaged components leveraging silicon and compound semiconductors are at the core of these new advancements covering the frequency range from 1 to 200 GHz. Applications benefiting from these results range from phased arrays to quantum computing and radio astronomy.

Technical Papers
Abstract
Tu2D-1: A 12.5mW Packaged K-Band CMOS SOI LNA with 1.5dB NF
Abdurrahman H. Aljuhani, Gabriel M. Rebeiz
Abdurrahman H. Aljuhani, Univ. of California, San Diego
(10:10 - 10:30)
Abstract
Tu2D-2: A Switched-Capacitor RF Receiver Exploiting MOS Parametric Amplification to Reduce NF
Kamlesh Badiyari, Nagarjuna Nallam
Nagarjuna Nallam, IIT Guwahati
(10:30 - 10:50)
Abstract
Tu2D-3: A 0.4–1.2GHz SiGe Cryogenic LNA for Readout of MKID Arrays
Mohsen Hosseini, Wei-Ting Wong, Joseph C. Bardin
Mohsen Hosseini, UMass Amherst
(10:50 - 11:10)
Abstract
Tu2D-4: W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
Fabian Thome, Arnulf Leuther, Felix Heinz, Oliver Ambacher
Fabian Thome, Fraunhofer IAF
(11:10 - 11:30)
Abstract
Tu2D-5: A 183-GHz Schottky Diode Receiver with 4dB Noise Figure
Martin Anderberg, Peter Sobis, Vladimir Drakinskiy, Joel Schleeh, Slavko Dejanovic, Anders Emrich, Jan Stake
Martin Anderberg, Omnisys Instruments
(11:30 - 11:50)

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Chinchun Meng
National Chiao Tung Univ.
Hiroshi Okazaki
NTT DoCoMo
Location
157BC
Abstract

This session introduces advances in frequency conversion techniques. Down convertor at 180 GHz, V-band mixer, K-band frequency multiplier, power modulator, and V-band OOK demodulator, and X-band injection-locked frequency divider will be presented.

Technical Papers
Abstract
Tu3D-1: A mm-Wave Quadrature Down-Conversion Mixer Based on a Six-Port Junction in 130-nm SiGe BiCMOS
Vincent Rieß, David Fritsche, Paul Stärke, Corrado Carta, Frank Ellinger
Vincent Rieß, Technische Universität Dresden
(13:30 - 13:50)
Abstract
Tu3D-2: V-Band Sub-Harmonic Gate-Pumped Resistive Mixer with a 180° Hybrid Using an In-Phase Power Divider Merging with an Out-of-Phase Marchand Balun
Wei Ling Chang, Chinchun Meng, Guo-Wei Huang
Chinchun Meng, National Chiao Tung Univ.
(13:50 - 14:10)
Abstract
Tu3D-3: A Single-Path Reconfigurable Frequency Multiplier for 28/39GHz Dual-Band Transceivers
Roee Ben Yishay, Danny Elad
Roee Ben Yishay, ON Semiconductor
(14:10 - 14:30)
Abstract
Tu3D-4: A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI
Cameron Hill, Ahmed Hamza, Hussam AlShammary, James F. Buckwalter
Cameron Hill, Univ. of California, Santa Barbara
(14:30 - 14:50)
Abstract
Tu3D-5: 22-Gb/s 60-GHz OOK Demodulator in 0.13-µm SiGe BiCMOS for Ultra-High-Speed Wireless Communication
Ali Ferchichi, Sami Ur Rehman, Corrado Carta, Frank Ellinger
Ali Ferchichi, Technische Universität Dresden
(14:50 - 15:00)
Abstract
Tu3D-6: High-Modulus Injection-Locked Frequency Divider Using Multi-Resonance Tank
Wen-Cheng Lai, Sheng-Lyang Jang, Guan-Zhang Li
Wen-Cheng Lai, National Penghu University of Science & Technology
(15:00 - 15:10)
Wolfgang Heinrich
FBH
Kenle Chen
Univ. of South Florida
Location
259AB
Abstract

This session presents state-of-the-art designs of integrated power amplifiers in various CMOS technologies. The focus is primarily on emerging mm-Wave PAs, but a novel sub-6 GHz PA is also presented. The designs target linear and efficient power amplification towards 5G wireless communications.

Technical Papers
Abstract
Tu3H-1: A 38-GHz-Band Power Amplifier with Analog Pre-Distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal
Yu-Chun Chen, Tsung-Ching Tsai, Jeng-Han Tsai, Tian-Wei Huang
Yu-Chun Chen, National Taiwan Univ.
(13:30 - 13:50)
Abstract
Tu3H-2: A Ka-Band Stacked Power Amplifier with 24.8-dBm Output Power and 24.3% PAE in 65-nm CMOS Technology
Yang Chang, Bo-Ze Lu, Yunshan Wang, Huei Wang
Yang Chang, National Taiwan Univ.
(13:50 - 14:10)
Abstract
Tu3H-3: A Ka-Band Highly Linear Power Amplifier with a Linearization Bias Circuit
Dehan Wang, Wenhua Chen, Long Chen, Xin Liu, Zhenghe Feng
Dehan Wang, Tsinghua Univ.
(14:10 - 14:30)
Abstract
Tu3H-4: A Fully-Integrated 2.6GHz Stacked Switching Power Amplifier in 45nm SOI CMOS with >2W Output Power and 43.5% Efficiency
Mohammad Khorshidian, Harish Krishnaswamy
Mohammad Khorshidian, Columbia Univ.
(14:30 - 14:50)
Abstract
Tu3H-5: A 19.1% PAE, 22.4-dBm 53-GHz Parallel Power Combining Power Amplifier with Stacked-FET Techniques in 90-nm CMOS
Wei-Che Sun, Chien-Nan Kuo
Wei-Che Sun, National Chiao Tung Univ.
(14:50 - 15:00)

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Ruonan Han
MIT
Emery Chen
National Taiwan Univ.
Location
157BC
Abstract

The four papers in this session covers oscillator designs from GHz to sub-THz range. Presented techniques aim for reduction of phase noise, micro-watt-level power consumption, quadrature generation via sub-harmonic injection locking, as well as dual-band oscillation at non-harmonic frequencies.

Technical Papers
Abstract
Tu4D-1: A K-Band CMOS Low-Phase-Noise Sub-Harmonically Injection-Locked QVCO with Divider-Less Frequency-Tracking Loop
Han-Sen Yang, Ian Yi-En Shen, Hong-Yeh Chang
Hong-Yeh Chang, National Central Univ.
(15:55 - 16:15)
Abstract
Tu4D-2: An 100-to-110GHz Low-DC-Power Sub-Harmonically Injection-Locked Quadrature Oscillator Using Stacked Boosting Technique in 90-nm CMOS Process
Wei-Cheng Chen, Han-Nong Yeh, Hong-Yeh Chang
Wei-Cheng Chen, National Central Univ.
(16:15 - 16:35)
Abstract
Tu4D-3: A Dual-Band CMOS Standing-Wave Digitally Controlled Oscillator for Automotive Radars
Chun-Ming Lin, Kun-Yao Kao, Kun-You Lin
Yu-Ting Lin, National Taiwan Univ.
(16:35 - 16:55)
Abstract
Tu4D-4: A 0.1-V 5-GHz VCO Achieving FoM of 190-dBc/Hz
Jun-De Jin, Ying-Ta Lu
Jun-De Jin, TSMC
(16:55 - 17:15)

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Adrian Tang
Univ. of California, Los Angeles
Joachim Oberhammer
KTH
Location
157BC
Abstract

This session presents recent advances in mm-wave and THz systems
from 60 GHz to 500 GHz for communication and sensing applications.

Technical Papers
Abstract
We1D-1: A Low-Power FSK/Spatial Modulation Receiver for Short-Range mm-Wave Wireless Links
Kai Zhan, Yao Liu, Telesphor Kamgaing, Rahul Khanna, Georgios Dogiamis, Huaping Liu, Arun Natarajan
Kai Zhan, Oregon State Univ.
(08:00 - 08:20)
Abstract
We1D-2: 207–257GHz Integrated Sensing Readout System with Transducer in a 130-nm SiGe BiCMOS Technology
D. Wang, J. Yun, M.H. Eissa, M. Kucharski, K. Schmalz, A. Malignaggi, Y. Wang, J. Borngräber, Y. Liang, H.J. Ng, Q.H. Le, D.K. Huynh, T. Kämpfe, K. Seidel, Dietmar Kissinger
D. Wang, Fraunhofer IPMS
(08:20 - 08:40)
Abstract
We1D-3: A Broadband Dual-Polarized Terahertz Direct Detector in a 0.13-µm SiGe HBT Technology
Marcel Andree, Janusz Grzyb, Ritesh Jain, Bernd Heinemann, Ullrich R. Pfeiffer
Marcel Andree, Bergische Universität Wuppertal
(08:40 - 09:00)
Abstract
We1D-4: A 6-mW-DC-Power 300-GHz CMOS Receiver for Near-Field Wireless Communications
Sangyeop Lee, Ruibing Dong, Shinsuke Hara, Kyoya Takano, Shuhei Amakawa, Takeshi Yoshida, Minoru Fujishima
Sangyeop Lee, Hiroshima University
(09:00 - 09:20)
Abstract
We1D-5: A 220GHz Dual Channel LNA Front-End for a Direct Detection Polarimetric Receiver
Caitlyn M. Cooke, Kevin Leong, Alfonso Escorcia, Xiao Bing Mei, Taylor W. Barton, Manuel A. Vega, Dong L. Wu, William R. Deal
Caitlyn M. Cooke, Northrop Grumman
(09:20 - 09:40)
Jonmei Yan
MaXentric Technologies
Wenhua Chen
Tsinghua Univ.
Location
259AB
Abstract

This session covers new developments in high efficiency GaN amplifiers from UHF through Ka-band. Recent advances in Doherty/outphasing architectures will be presented.

Technical Papers
Abstract
We1H-1: 70% Efficient Dual-Input Doherty-Outphasing Power Amplifier for Large PAPR Signals
Atsushi Yamaoka, Thomas M. Hone, Keiichi Yamaguchi
Atsushi Yamaoka, Toshiba
(08:00 - 08:20)
Abstract
We1H-2: A Fully Integrated C-Band GaN MMIC Doherty Power Amplifier with High Gain and High Efficiency for 5G Application
Guansheng Lv, Wenhua Chen, Long Chen, Zhenghe Feng
Guansheng Lv, Tsinghua Univ.
(08:20 - 08:40)
Abstract
We1H-3: Design, Analysis and Evaluation of a Broadband High-Power Amplifier for Ka-Band Frequencies
Philipp Neininger, Laurenz John, Peter Brückner, Christian Friesicke, Rüdiger Quay, Thomas Zwick
Philipp Neininger, Fraunhofer IAF
(08:40 - 09:00)
Abstract
We1H-4: High-Efficiency, Ka-Band GaN Power Amplifiers
Nicholas Estella, Edmar Camargo, James Schellenberg, Lani Bui
Nicholas Estella, QuinStar Technology
(09:00 - 09:20)
Abstract
We1H-5: A Highly Efficient and Compact 6kW GaN Solid-State Microwave Generator for CW 2.45GHz Applications
Haesoo Jeong, Taesan Yoon, Hojoon Yoo, Hyeonsuk Jung, Samuel Cho
Haesoo Jeong, RFHIC
(09:20 - 09:30)

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William Deal
Northrop Grumman
Theodore Reck
Virginia Diodes
Location
157BC
Abstract

Technology capabilities of advanced silicon-based and III/V processes are rapidly improving and enable transceivers at mm-Wave frequencies.
Circuit techniques and technology demonstration will be presented in this session.

Technical Papers
Abstract
We2D-1: A W-Band Switching Rectifier with 27% Efficiency for Wireless Power Transfer in 65-nm CMOS
Pingyang He, Dixian Zhao
Pingyang He, Southeast Univ.
(10:10 - 10:30)
Abstract
We2D-2: A WR-3 Band Distributed Frequency Doubler with a Differential Quasi-Cascode Structure
Iljin Lee, Younghwan Kim, Sanggeun Jeon
Iljin Lee, Korea Univ.
(10:30 - 10:50)
Abstract
We2D-3: A 90–98GHz 2×2 Phased-Array Transmitter with High Resolution Phase Control and Digital Gain Compensation
Bingzheng Yang, Huizhen Jenny Qian, Jie Zhou, Yiyang Shu, Xun Luo
Bingzheng Yang, UESTC
(10:50 - 11:10)
Abstract
We2D-4: A Highly Linear FMCW Radar Chipset in H-Band with 50GHz Bandwidth
Christopher M. Grötsch, Benjamin Schoch, Sandrine Wagner, Ingmar Kallfass
Christopher M. Grötsch, Univ. Stuttgart
(11:10 - 11:30)
Abstract
We2D-5: Highly-Integrated Low-Power 60GHz Multichannel Transceiver for Radar Applications in 28nm CMOS
V. Issakov, R. Ciocoveanu, R. Weigel, A. Geiselbrechtinger, J. Rimmelspacher
V. Issakov, Infineon Technologies
(11:30 - 11:40)
Abstract
We2D-6: A W-Band Transmitter Channel with 16dBm Output Power and a Receiver Channel with 58.6mW DC Power Consumption Using Heterogeneously Integrated InP HBT and Si CMOS Technologies
Ahmed S.H. Ahmed, Arda Simsek, Ali A. Farid, Andrew D. Carter, Miguel Urteaga, Mark J.W. Rodwell
Ahmed S.H. Ahmed, Univ. of California, Santa Barbara
(11:40 - 11:50)
Charles Campbell
Qorvo
Rüdiger Quay
Fraunhofer IAF
Location
259AB
Abstract

This session describes wide bandwidth design techniques and circuit examples. Two papers present state-of-the-art distributed power amplifiers. The remaining papers in the session describe high-efficiency design techniques.

Technical Papers
Abstract
We2H-1: A 2–20GHz Distributed GaN Power Amplifier Using a Novel Biasing Technique
Michael Roberg, Scott Schafer, Orlando Marrufo, Terry Hon
Michael Roberg, Qorvo
(10:10 - 10:30)
Abstract
We2H-2: High-Efficiency Broadband PA Design Based on Continuous Class-F Mode with Compression
Syed M.H. Syed Anera, Thoalfukar Husseini, Sattam Alsahali, James J. Bell, Roberto Quaglia, Munawar Kermalli, Paul J. Tasker, Johannes Benedikt
Syed M.H. Syed Anera, Cardiff University
(10:30 - 10:50)
Abstract
We2H-3: A 10–3100MHz Nested-Mode Highly Efficient Power Amplifier for Multi-Octave Applications
Xiaofan Chen, Wenhua Chen, Zhenghe Feng, Fadhel M. Ghannouchi
Xiaofan Chen, Tsinghua Univ.
(10:50 - 11:10)
Abstract
We2H-4: A Novel 1.4–4.8GHz Ultra-Wideband, Over 45% High Efficiency Digitally Assisted Frequency-Periodic Load Modulated Amplifier
Yuji Komatsuzaki, Rui Ma, Mouhacine Benosman, Yukimasa Nagai, Shuichi Sakata, Keigo Nakatani, Shintaro Shinjo
Yuji Komatsuzaki, Mitsubishi Electric
(11:10 - 11:30)
Abstract
We2H-5: A 2 to 18GHz Compact High-Gain and High-Power GaN Amplifier
Haifeng Wu, Qian Lin, Lin Zhu, Shanji Chen, Yijun Chen, Liulin Hu
Qian Lin, Qinghai University for Nationalities
(11:30 - 11:50)

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Jeffrey Nanzer
Michigan State Univ.
Mona Jarrahi
Univ. of California, Los Angeles
Location
157BC
Abstract

This session presents recent advances in device and system technologies for emission, modulation, and detection of microwave and THz signals. Presentations will show novel THz source and detector architectures for advanced communication and spectroscopy, microwave-photonics devices for improved modulation bandwidth, and enhanced transmit and receive capabilities.

Technical Papers
Abstract
We3D-1: 300-GHz-Band Wireless Communication Using Fermi-Level Managed Barrier Diode Receiver
Tadao Nagatsuma, Masato Sonoda, Taiki Higashimoto, Ryo Kimura, Li Yi, Hiroshi Ito
Tadao Nagatsuma, Osaka Univ.
(15:55 - 16:15)
Abstract
We3D-2: Broadband Photoconductive Terahertz Detection with a 100dB Dynamic Range without Using a Short-Carrier-Lifetime Substrate
Nezih Tolga Yardimci, Deniz Turan, Semih Cakmakyapan, Mona Jarrahi
Nezih Tolga Yardimci, Univ. of California, Los Angeles
(16:15 - 16:35)
Abstract
We3D-3: High-Power Terahertz Generation from Bias-Free, Telecommunication-Compatible Photoconductive Nanoantennas
Deniz Turan, Nezih Tolga Yardimci, Mona Jarrahi
Deniz Turan, Univ. of California, Los Angeles
(16:35 - 16:55)
Abstract
We3D-4: A 1 to 20GHz Silicon-Germanium Low-Noise Distributed Driver for RF Silicon Photonic Mach-Zehnder Modulators
Navid Hosseinzadeh, Aditya Jain, Kang Ning, Roger Helkey, James F. Buckwalter
Navid Hosseinzadeh, Univ. of California, Santa Barbara
(16:55 - 17:05)
Abstract
We3D-5: Broadband Simultaneous Transmit and Receive from a Single Antenna Using Improved Photonic Architecture
Edward I. Ackerman, Charles H. Cox III, Harold V. Roussell, Preetpaul S. Devgan
Edward I. Ackerman, Photonic Systems
(17:05 - 17:15)

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Gayle Collins
Obsidian Microwave
John Wood
Wolfspeed
Location
259AB
Abstract

This sessions includes descriptions of novel PA design techniques, such as current mode outphasing and input waveform shaping for high efficiency. The design of baseband terminations is an important and topical subject in high power wideband PA design, and we have three papers describing design, analysis, and implementation of wide bandwidth baseband terminations.

Technical Papers
Abstract
Th1H-1: Current Mode Outphasing Power Amplifier
Luís C. Nunes, Filipe M. Barradas, Diogo R. Barros, Pedro M. Cabral, José C. Pedro
Luís C. Nunes, Universidade de Aveiro
(08:00 - 08:20)
Abstract
Th1H-2: Comprehensive Analysis of Input Waveform Shaping for Efficiency Enhancement in Class B Power Amplifiers
Sagar K. Dhar, Tushar Sharma, Ning Zhu, Damon G. Holmes, Ramzi Darraji, Fadhel M. Ghannouchi
Sagar K. Dhar, Univ. of Calgary
(08:20 - 08:40)
Abstract
Th1H-3: Analysis of the Baseband Termination of High Power RF Transistors
Hussain Ladhani, Jeffrey K. Jones, J. Stevenson Kenney
Hussain Ladhani, NXP Semiconductors
(08:40 - 09:00)
Abstract
Th1H-4: Impact of the Input Baseband Impedance on the Instantaneous Bandwidth of Wideband Power Amplifiers
Diogo R. Barros, Luís C. Nunes, Pedro M. Cabral, José C. Pedro
Diogo R. Barros, Universidade de Aveiro
(09:00 - 09:20)
Abstract
Th1H-5: Compact High-Efficiency High-Power Wideband GaN Amplifier Supporting 395MHz Instantaneous Bandwidth
Ning Zhu, Roy McLaren, Jeffrey S. Roberts, Damon G. Holmes, Mir Masood, Jeffrey K. Jones
Ning Zhu, NXP Semiconductors
(09:20 - 09:40)

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James Buckwalter
Univ. of California, Santa Barbara
Ed Niehenke
Niehenke Consulting
Location
157BC
Abstract

This session will include papers presenting record results for GaN and InP power amplifiers (PA) as well as new measurement data of PA cells in III-V HEMT technologies at terahertz bands.

Technical Papers
Abstract
Th2D-1: A 140-GHz 0.25-W PA and a 55–135GHz 115–135mW PA, High-Gain, Broadband Power Amplifier MMICs in 250-nm InP HBT
Zach Griffith, Miguel Urteaga, Petra Rowell
Zach Griffith, Teledyne Scientific & Imaging
(10:10 - 10:30)
Abstract
Th2D-2: 300GHz Broadband Power Amplifier with 508GHz Gain-Bandwidth Product and 8dBm Output Power
Benjamin Schoch, Axel Tessmann, Arnulf Leuther, Sandrine Wagner, Ingmar Kallfass
Benjamin Schoch, Univ. Stuttgart
(10:30 - 10:50)
Abstract
Th2D-3: A 175GHz Bandwidth High Linearity Distributed Amplifier in 500nm InP DHBT Technology
Tanjil Shivan, Maruf Hossain, Ralf Doerner, Steffen Schulz, Tom K. Johansen, Sebastian Boppel, Wolfgang Heinrich, Viktor Krozer
Tanjil Shivan, FBH
(10:50 - 11:10)
Abstract
Th2D-4: 190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth
Maciej Ćwikliński, Peter Brückner, Stefano Leone, Christian Friesicke, Roger Lozar, Hermann Maßler, Rüdiger Quay, Oliver Ambacher
Maciej Ćwikliński, Fraunhofer IAF
(11:10 - 11:30)
Abstract
Th2D-5: Investigation of Compact Power Amplifier Cells at THz Frequencies Using InGaAs mHEMT Technology
Laurenz John, Axel Tessmann, Arnulf Leuther, Philipp Neininger, Thomas Zwick
Laurenz John, Fraunhofer IAF
(11:30 - 11:50)
Tony Ivanov
U.S. Army
Cynthia Hang
Raytheon
Location
254AB
Abstract

Advances in silicon frequency discriminator circuits, substrate parasitics reduction and InP/GaAs HBT microwave monolithic ICs.

Technical Papers
Abstract
Th2F-1: A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm² Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
Kun-Chan Chiang, Tsung-Ching Tsai, Ian Huang, Jeng-Han Tsai, Tian-Wei Huang
Kun-Chan Chiang, National Taiwan Univ.
(10:10 - 10:30)
Abstract
Th2F-2: A 0.1-to-10GHz Digital Frequency Discriminator IC with Time to Digital Converter and Adaptive Control of Frequency Division Ratio for Instantaneous Frequency Measurement
Akihito Hirai, Koji Tsutsumi, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa
Akihito Hirai, Mitsubishi Electric
(10:30 - 10:50)
Abstract
Th2F-3: Post-Process Local Porous Silicon Integration Method for RF Application
Gilles Scheen, Romain Tuyaerts, M. Rack, Lucas Nyssens, Jonathan Rasson, Jean-Pierre Raskin
Gilles Scheen, Université catholique de Louvain
(10:50 - 11:10)
Abstract
Th2F-4: Silicon-Substrate Enhancement Technique Enabling High Quality Integrated RF Passives
M. Rack, Lucas Nyssens, Jean-Pierre Raskin
M. Rack, Université catholique de Louvain
(11:10 - 11:20)
Abstract
Th2F-5: InGaP/GaAs HBT Broadband Power Amplifier IC with 54.3% Fractional Bandwidth Based on Cascode Structure
Wooseok Lee, Hyunuk Kang, Hwiseob Lee, Wonseob Lim, Jongseok Bae, Hyungmo Koo, Jangsup Yoon, Youngoo Yang
Wooseok Lee, Sungkyunkwan Univ.
(11:20 - 11:30)
Abstract
Th2F-6: 185mW InP HBT Power Amplifier with 1 Octave Bandwidth (25–50GHz), 38% Peak PAE at 44GHz and Chip Area of 276×672µm²
Andrea Arias, Petra Rowell, Miguel Urteaga, Zach Griffith, K. Shinohara, Josh Bergman, Andrew D. Carter, Richard Pierson, Bobby Brar, James F. Buckwalter, Mark J.W. Rodwell
Andrea Arias, Teledyne Scientific & Imaging
(11:30 - 11:50)
Paul Draxler
Qualcomm
Zoya Popović
Univ. of Colorado
Location
259AB
Abstract

Load-modulated PAs enable higher efficiency at back-off. This can be achieved through 2-way or N-way Doherty or other non-isolated output combiner networks. Low-power CMOS through high-power GaN and LDMOS implementations are presented over various bandwidths below 6GHz.

Technical Papers
Abstract
Th2H-1: A 750-W High Efficiency LDMOS New Four-Way Doherty Amplifier for Base-Station Applications
Xiaochuan Jiang, Tao Zhang, Jingchu He, Steve Loysel, Binghui Zhang, John Gajadharsing
Xiaochuan Jiang, Ampleon
(10:10 - 10:30)
Abstract
Th2H-2: An 80W Power Amplifier with 50% Efficiency at 8dB Power Back-Off Over 2.6–3.8GHz
Paul Saad, Rui Hou, Richard Hellberg, Bo Berglund
Paul Saad, Ericsson
(10:30 - 10:50)
Abstract
Th2H-3: Fully Integrated Wideband Doherty PA with Additive-Voltage Supported Load-Modulation in CMOS 130nm
Eduard Heidebrecht, Muh-Dey Wei, Renato Negra
Eduard Heidebrecht, RWTH Aachen Univ.
(10:50 - 11:10)
Abstract
Th2H-4: Load Modulated Balanced Amplifier with Reconfigurable Phase Control for Extended Dynamic Range
Yuchen Cao, Haifeng Lyu, Kenle Chen
Yuchen Cao, Univ. of Central Florida
(11:10 - 11:30)
Abstract
Th2H-5: Doherty-to-Balanced Switchable Power Amplifier
Haifeng Lyu, Yuchen Cao, Kenle Chen
Haifeng Lyu, Univ. of Central Florida
(11:30 - 11:40)

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Ali Darwish
U.S. Army
Nicholas Kolias
Raytheon
Location
254AB
Abstract

Advanced gallium nitride devices and MMICs are presented including GaN/Diamond technology, and mm-Wave GaN switches, phase-shifters, and amplifiers.

Technical Papers
Abstract
Th3F-1: A GaN/Diamond HEMTs with 23W/mm for Next Generation High Power RF Application
Won Sang Lee, Kyung Won Lee, Seung Hyun Lee, Kevin Cho, Samuel Cho
Won Sang Lee, RFHIC
(13:30 - 13:50)
Abstract
Th3F-2: GaN MMIC Differential Multi-Function Chip for Ka-Band Applications
Boris Berthelot, Jean-Guy Tartarin, Christophe Viallon, Remy Leblanc, Hassan Maher, François Boone
Boris Berthelot, LAAS
(13:50 - 14:10)
Abstract
Th3F-3: Millimeter-Wave Single-Pole Double-Throw Switches Based on a 100-nm Gate-Length AlGaN/GaN-HEMT Technology
Fabian Thome, Peter Brückner, Rüdiger Quay, Oliver Ambacher
Fabian Thome, Fraunhofer IAF
(14:10 - 14:30)
Abstract
Th3F-4: High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer
Erdin Ture, Stefano Leone, Peter Brückner, Rüdiger Quay, Oliver Ambacher
Erdin Ture, Fraunhofer IAF
(14:30 - 14:50)