This session includes a selection of papers covering HF/VHF/UHF technologies in power amplification, linearization, and antennas.
This exciting session presents advancements in low noise components embracing cutting edge sensing applications. The papers in this session present innovative circuit techniques as well as technology enhancement across a wide range of operating temperatures. Integrated circuits and packaged components leveraging silicon and compound semiconductors are at the core of these new advancements covering the frequency range from 1 to 200 GHz. Applications benefiting from these results range from phased arrays to quantum computing and radio astronomy.
This session introduces advances in frequency conversion techniques. Down convertor at 180 GHz, V-band mixer, K-band frequency multiplier, power modulator, and V-band OOK demodulator, and X-band injection-locked frequency divider will be presented.
This session presents state-of-the-art designs of integrated power amplifiers in various CMOS technologies. The focus is primarily on emerging mm-Wave PAs, but a novel sub-6 GHz PA is also presented. The designs target linear and efficient power amplification towards 5G wireless communications.
The four papers in this session covers oscillator designs from GHz to sub-THz range. Presented techniques aim for reduction of phase noise, micro-watt-level power consumption, quadrature generation via sub-harmonic injection locking, as well as dual-band oscillation at non-harmonic frequencies.
This session presents recent advances in mm-wave and THz systems
from 60 GHz to 500 GHz for communication and sensing applications.
This session covers new developments in high efficiency GaN amplifiers from UHF through Ka-band. Recent advances in Doherty/outphasing architectures will be presented.
Technology capabilities of advanced silicon-based and III/V processes are rapidly improving and enable transceivers at mm-Wave frequencies.
Circuit techniques and technology demonstration will be presented in this session.
This session describes wide bandwidth design techniques and circuit examples. Two papers present state-of-the-art distributed power amplifiers. The remaining papers in the session describe high-efficiency design techniques.
This session presents recent advances in device and system technologies for emission, modulation, and detection of microwave and THz signals. Presentations will show novel THz source and detector architectures for advanced communication and spectroscopy, microwave-photonics devices for improved modulation bandwidth, and enhanced transmit and receive capabilities.
This sessions includes descriptions of novel PA design techniques, such as current mode outphasing and input waveform shaping for high efficiency. The design of baseband terminations is an important and topical subject in high power wideband PA design, and we have three papers describing design, analysis, and implementation of wide bandwidth baseband terminations.
This session will include papers presenting record results for GaN and InP power amplifiers (PA) as well as new measurement data of PA cells in III-V HEMT technologies at terahertz bands.
Advances in silicon frequency discriminator circuits, substrate parasitics reduction and InP/GaAs HBT microwave monolithic ICs.
Load-modulated PAs enable higher efficiency at back-off. This can be achieved through 2-way or N-way Doherty or other non-isolated output combiner networks. Low-power CMOS through high-power GaN and LDMOS implementations are presented over various bandwidths below 6GHz.
Advanced gallium nitride devices and MMICs are presented including GaN/Diamond technology, and mm-Wave GaN switches, phase-shifters, and amplifiers.