A W-Band Switching Rectifier with 27% Efficiency for Wireless Power Transfer in 65-nm CMOS

A W-band switching rectifier for wireless power transfer fabricated in 65-nm CMOS technology is presented in this paper. A design methodology based on the theory of drain-pumped mixer is used to transform a drain mixer circuit into a switching rectifier circuit. The rectifier achieves a peak power conversion efficiency (PCE) of 27% at 91 GHz for an optimum load resistance of 43 Ω at about 16 dBm input power with a compact size of 0.35 mm × 0.25 mm. The measured S11 equals -26 dB at approximately 89 GHz and is less than -10 dB from 88 to 96 GHz.