Black Phosphorus MOSFET for Future-Generation Thin-Film Electronics Capable of Microwave Operation

With novel contact and gate dielectric, a top-gated black phosphorus MOSFET exhibited record performance with 19-GHz forward-current-gain cutoff frequency and 29-GHz maximum frequency of oscillation. These results demonstrated the potential of two-dimensional atomic-layered materials for future-generation thin-film transistors capable of microwave operation. Further, analysis of the cutoff frequencies showed that the novel contact rendered contact resistance to secondary importance and, with improved transconductance, the black phosphorus MOSFET may even operate at millimeter-wave frequencies.