A Novel Contactless Dielectric Probe for On-Wafer Testing and Characterization in the V-Band
A Novel contactless dielectric probe is proposed for millimeter-wave and terahertz excitation of silicon-based devices for on wafer testing and characterization. The dielectric probe tip is made of high resistivity silicon material. The cross-section of the probe defines the working frequency band of the probe. The probe is simply a silicon dielectric waveguide with both ends are tapered. One tapper is inserted in the WR15 metallic waveguide for excitation and the other for exciting the on-wafer devices. The probe terminal is fixed to a metallic waveguide through a 3D printed holder. The simulation shows an average coupling losses of about 1 dB at the testing terminal over 55–75 GHz.