W Band Carbon Nanotubes Interconnects Compatible with CMOS Technology
Whether it is for 5G applications, such as increasing data rates and provide channels for the internet of things (IOT), to do THz imaging, or other applications, there is an increasing need for RF technologies at higher frequencies. In particular, novel materials more reliable and more stable at high frequencies, are of strong interest. In this context, the use of carbon nanotube (CNT) based bumps to replace existing materials for interconnects, is not unheard of. However, in this article, demonstration of a successful experimental CNT flip chip device in the W band (75GHz-110GHz) is done. This new test structure is based on a dedicated CNT transfer process, which is compatible with CMOS technologies, due to process temperatures that are kept below 220°C.