Body Biasing in 28nm UTBB FD-SOI CMOS Technology — a Device Approach to the Circuit Design
As wireless networks are transitioning to 5G, there is a high demand for innovative wideband transceivers that will support growing number of bands in an area and cost efficient manner. Stringent system level requirements, new application scenarios together with continuing downscaling and voltage supply decrease impose novel design methodologies and use of innovative semiconductor technologies like 28nm UTBB FD SOI CMOS. In this presentation, body biasing technique advantage given to a mixer-first receiver design will be explained from the device perspective. Area and circuit complexity reduction will be achieved for class A and class AB amplifiers while keeping a tight control over important figures of merit in all process corners.