Benefits of 22FDX for NB-IOT RF Integration

Challenges achieving highest levels NB-IOT transceiver integration are addressed in 22FDX through receiver, synthesizer, transmitter and transceiver design innovation leveraging 22nm FDSOI features. Efficient switching-class power amplifiers with 3GPP cellular required gain control become possible with stacked-FET techniques leveraging 22FDX back-gate. Integration-friendly, inductor-free low-noise amplifiers leverage high self-gain and back-gate move bias and out of the signal path eliminating parasitics in ways not possible with FinFET or bulk planar technologies, leading to unparalleled capability for cellular IoT RF SoC integration.