Single-Chip GaN Front-End for X-Band AESA

A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside a T/R module. The first part of the presentation will deal with the demands from the system towards the front-end, but also with some drawbacks from this new architecture compared to well established T/R-module architectures. The second part of the presentation will describe the design and measurement results of a GaN-based single-chip T/R module front-end (HPA, low noise amplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8GHz to 12GHz.