Properties of GaN LNAs for Front-End Applications

GaN HEMTs are promising devices not only for high power, broadband, and highly efficient applications, but also for low-noise applications that covers microwave and mm-wave range. GaN HEMTs combine low noise-figure performance with high breakdown-voltage characteristics and enables high linearity and robustness performance. GaN based LNA yields significant simplifications of transceiver system design and also the realization of new system concepts. This presentation will show different approaches in the design of LNA focusing on high linearity and extremely rugged characteristics for applications in C-Band and X-Band.