Recent Developments on SiGe BiCMOS Technologies for mm-Wave and THz Applications

In this paper, the latest developments of high performance SiGe BiCMOS technologies with additional WLP technology modules are demonstrated. The combination of HBTs with fmax values beyond 700 GHz together with WLP technology modules such as interposer, Through-Silicon Vias (TSVs) and wafer bonding techniques are explained. Both silicon interposer substrates with embedded TSVs together with a novel Al-Al wafer bonding integration technique are realized to provide a high performance and low-cost FOWLP platform for 3D heterogeneous integration.