A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA -- High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT

Two 160-183GHz high-gain, high PAE G-band SSPAs are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (P,out) objectives. The first result is a 0.24-W PA using 4-way combining. S21 is 21.0dB, DC power (P,DC) is 3.05-W. The 3-dB S21 BW is 24.3GHz. At 170-GHz, P,out is 244-mW (7.5% PAE). P,out is no less than 0.20-W between 160-180GHz, and 177-mW at 183-GHz. The 170-GHz OP1dB is 120-mW (3.8% PAE). This PA result improves upon the prior state-of-the-art by 2.2-2.8× for peak SSPA power. The second result is a 0.14-W PA using 2-way combining. S21 is 23.6dB, P,DC is 1.35-W. The 3-dB S21 BW is 23.8GHz. At 170-GHz, peak P,out is 140-mW (9.50% PAE), and P,out is 116-140mW (8.0-9.5% PAE) between 160-183GHz. The 170-GHz OP1dB is 70-mW (5.1% PAE). This PA result improves upon the prior state-of-the-art by 1.4-1.6× for peak SSPA power.