Broadband and High-Gain 400-GHz InGaAs mHEMT Medium-Power Amplifier S-MMIC
In this paper, the design and performance of a medium-power amplifier (MPA) submillimeter-wave monolithic integrated circuit (S-MMIC) is presented. The MPA demonstrates a flat small-signal gain of approximately 20 dB, measured over a frequency span from 290 to 410 GHz, and a respective 3-dB bandwidth from 280 to 430 GHz. The measured output power ranges from 1.5 to 3.3 dBm, over a large-signal drive from 355 to 395 GHz—limited by the measurement set-up. The amplifier utilizes four cascode stages, each realized via two 8-μm finger-width two-finger InAlAs/InGaAs metamorphic high-electron-mobility transistors in parallel for the common-source part and respectively for the common-gate part of the cascode. The total gate width (TGW) of the output stage is 32 μm. A maximum output power per TGW of 66.2mW/mm is achieved with a transducer gain of 16 dB, representing a state-of-the-art performance for MMIC-based amplifiers between 355 and 395 GHz.