Methodology of High Efficiency mm-Wave GaN Power Amplifiers

The latest generation 40nm high voltage GaN DHFETs maintain excellent combination of efficiency and gain over a broad range of quiescent drain bias voltages (4V < Vds < 16V) even at frequencies that exceed 50GHz. The ability of the these devices to operate over a broad range of bias conditions while maintaining good efficiency and gain can be used for power management in cognitive mm-wave RF systems to conserve prime power. In this talk we will discuss design methodology of high efficiency mm-wave GaN MMIC Power Amplifiers.